logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9466706 B1

PDFFull Text
Date of Patent:
Oct. 11, 2016

Filed:

Jun. 29, 2015

Semiconductor device including first and second gate insulating films disposed on a semiconductor layer and manufacturing method of the same

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Noriaki Murakami, Kiyosu, JP;

Tohru Oka, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PPLC

Primary Examiner:

William Coleman

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/0228 (2013.01); H01L 21/28264 (2013.01); H01L 21/30612 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/513 (2013.01); H01L 29/66446 (2013.01); H01L 29/66522 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device, comprises: a semiconductor layer, a first gate insulating film, a second gate insulating film and a gate electrode. The semiconductor layer is mainly made of gallium nitride (GaN). The first gate insulating film is formed on the semiconductor layer by atomic layer deposition using ozone as an oxidizing agent and is mainly made of an oxide. The second gate insulating film is formed on the first gate insulating film by atomic layer deposition using oxygen plasma as an oxidizing agent, and is mainly made of an oxide and contains carbon (C) at a lower concentration than that in the first gate insulating film. The gate electrode is formed on the second gate insulating film.

Find Patent Forward Citations

Loading…