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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9466675 B1

PDFFull Text
Date of Patent:
Oct. 11, 2016

Filed:

Mar. 04, 2014

Method of manufacturing silicon carbide semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Tomihito Miyazaki, Osaka, JP;

Chikayuki Okamoto, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

F. Brock Riggs

Primary Examiner:

Charles Garber

Assistant Examiner:

Abdulfattah Mustapha

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/16 (2006.01); H01L 23/544 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02694 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 21/311 (2013.01); H01L 21/3115 (2013.01); H01L 23/544 (2013.01); H01L 29/0619 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A recess is formed by partially etching a silicon carbide substrate. A mask layer is formed on the silicon carbide substrate by means of photolithography using the recess as an alignment mark. An impurity is implanted into the silicon carbide substrate using the mask layer. The silicon carbide substrate is annealed. After the annealing, a first electrode layer is deposited on the silicon carbide substrate. The first electrode layer is patterned by means of photolithography using the recess in the silicon carbide substrate as an alignment mark.

Find Patent Forward Citations

Miyazaki, Tomihito. (2016). Method of manufacturing silicon carbide semiconductor device (U.S. Patent No. 9466675). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9466675

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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