The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Aug. 14, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Nam Kyun Park, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device includes an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first region, and a fin gate extending to overlap an upper surface and a lateral surface of the active pillar. The first region of the active pillar is formed of a semiconductor layer having a lattice constant smaller than that of the second region of the active pillar.