The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Feb. 05, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Naoki Inatani, Kawasaki, JP;

Daisuke Shimoyama, Yamato, JP;

Kei Aoki, Ebina, JP;

Masaki Kurihara, Koza-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0216 (2014.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14687 (2013.01); H01L 31/0216 (2013.01); H01L 31/02327 (2013.01);
Abstract

A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.


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