The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Jun. 23, 2015
Applicants:

Junho Yoon, Seoul, KR;

Sunwoo Park, Hwaseong-si, KR;

Chungho Song, Uiwang-si, KR;

Heegeun Jeong, Suwon-si, KR;

Inventors:

Junho Yoon, Seoul, KR;

Sunwoo Park, Hwaseong-si, KR;

Chungho Song, Uiwang-si, KR;

Heegeun Jeong, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01);
Abstract

An image sensor includes a substrate, a shallow trench isolation layer, a first deep trench isolation layer, and a second deep trench isolation layer. The substrate includes a first surface, a second surface opposing the first surface, and a plurality of unit pixel regions. The shallow trench isolation layer is adjacent to the first surface. The first deep trench isolation layer is adjacent to the shallow trench isolation layer and extends toward the second surface in the substrate. The second deep trench isolation layer is adjacent to the second surface and vertically overlaps the first deep trench isolation layer. The first and second deep trench isolation layers isolate the unit pixel regions from each other.


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