The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jan. 21, 2015
Powerchip Technology Corporation, Hsinchu, TW;
Kai-Yao Shih, Hsinchu, TW;
Ssu-Ting Wang, Taichung, TW;
Chi-Kai Feng, Hsinchu, TW;
Tzung-Hua Ying, Hsinchu, TW;
Te-Yuan Yin, Hsinchu, TW;
Powerchip Technology Corporation, Hsinchu, TW;
Abstract
A method of manufacturing a non-volatile memory is provided. A substrate including a first region and a second region is provided. A first patterning process is performed to the first region, so as to form a plurality of gate stack structures in the first region. Afterwards, a first sidewall oxide layer is formed to cover sidewalls and an upper surface of each gate stack structure, and a protection layer is then formed on the first sidewall oxide layer. Next, an ion implantation process is performed to the second region, and a second patterning process is performed to the second region so as to form a plurality of gate structures. Then, a second sidewall oxide layer covering sidewalls of each gate structure is formed.