The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Oct. 27, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Seung-Jin Yeom, Gyeonggi-do, KR;
Sung-Won Lim, Gyeonggi-do, KR;
Seung-Hee Hong, Gyeonggi-do, KR;
Hyo-Seok Lee, Gyeonggi-do, KR;
Nam-Yeal Lee, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10888 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 21/7682 (2013.01); H01L 21/76808 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 21/76897 (2013.01); H01L 23/48 (2013.01); H01L 27/1085 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping a portion of the air gaps, and capping structures each capping the other portion of the air gaps.