The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

May. 12, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junggil Yang, Suwon-si, KR;

Sangsu Kim, Yongin-si, KR;

TaeYong Kwon, Suwon-Si, KR;

Sung Gi Hur, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0922 (2013.01);
Abstract

A semiconductor device includes a substrate including first and second regions, a first transistor provided on the first region to include a first channel region protruding from the substrate, and a second transistor provided on the second region to include a second channel region and a gate electrode extending between the substrate and the second channel region. The first channel region may include a lower semiconductor pattern containing a different material from the second channel region and an upper semiconductor pattern containing the same material as the second channel region.


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