The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Jul. 31, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yo Sasaki, Saitama Saitama, JP;

Atsushi Yamamoto, Tachikawa Tokyo, JP;

Yuuji Hisazato, Fuchu Tokyo, JP;

Hitoshi Matsumura, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/488 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/3735 (2013.01); H01L 23/488 (2013.01); H01L 23/49822 (2013.01); H01L 23/49866 (2013.01); H01L 24/26 (2013.01); H01L 23/53233 (2013.01); H01L 2224/32225 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor element, amounting substrate which has wiring layers containing copper, and a joining layer which is provided between the semiconductor element and the wiring layer and made of an alloy containing copper and metal other than copper, and in which a melting point of the alloy is higher than a melting point of the metal.


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