The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Jan. 29, 2014
Applicant:

Ams Ag, Unterpremstaetten, AT;

Inventors:

Guenther Koppitsch, Lieboch, AT;

Ewald Stueckler, Unterpremstaetten, AT;

Karl Rohracher, Graz, AT;

Jordi Teva, Veldhoven, NL;

Assignee:

AMS AG, Unterpremstaetten, AT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); G03F 7/09 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); G03F 7/094 (2013.01); H01L 21/0335 (2013.01); H01L 21/7685 (2013.01); H01L 21/76883 (2013.01); H01L 21/76898 (2013.01);
Abstract

The method comprises the steps of providing a semiconductor body or substrate () with a recess or trench () in a main surface (), applying a mask () on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (), which is filled with a gas, and forming at least one opening () in the mask at a distance from the recess or trench, the distance () being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.


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