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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9466500 B1

PDFFull Text
Expired
Date of Patent:
Oct. 11, 2016

Filed:

Sep. 16, 2014

Method and apparatus for direct formation of nanometer scaled features

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

James Francis Mack, Woodside, CA (US);

Stephen Moffatt, St. Brelade, JE;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Maki Angadi

Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01L 21/306 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/306 (2013.01); C23C 16/04 (2013.01); C23C 16/45544 (2013.01); H01J 37/32431 (2013.01); H01L 21/0262 (2013.01); H01L 21/02104 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/28525 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/681 (2013.01); H01L 21/76224 (2013.01); H01L 21/76838 (2013.01); H01J 2237/334 (2013.01);
Abstract

An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of reactants, features can be directly formed on the workpiece on a sub-micron size, below the resolution of current photolithography. The features may be etched into a workpiece, or formed thereover.

Find Patent Forward Citations

Mack, James. (2016). Method and apparatus for direct formation of nanometer scaled features (U.S. Patent No. 9466500). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9466500

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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