The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jan. 22, 2014
Applicant:
Sensirion Ag, Stafa, CH;
Inventors:
Johannes Buhler, Uster, CH;
Cyrill Kuemin, Rapperswil, CH;
Assignee:
Sensirion AG, Stafa, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 7/00 (2006.01); G01N 9/00 (2006.01); H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/285 (2006.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); G01N 27/122 (2013.01);
Abstract
A CMOS gas sensor comprises a membrane () extending over an opening () of a silicon substrate (). A patch () of sensing material is arranged on the membrane () and in contact with electrodes () of platinum. A heater () of tungsten is located in or on the membrane () at the location of the patch () of metal-oxide sensing material. Combining platinum electrodes () with a tungsten heater () on top of a CMOS structure provides a gas sensor of high reliability and stability.