The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Feb. 18, 2015
Applicant:

Oracle International Corporation, Redwood City, CA (US);

Inventors:

Stevan S. Djordjevic, San Diego, CA (US);

Shiyun Lin, San Diego, CA (US);

Ivan Shubin, San Diego, CA (US);

Xuezhe Zheng, San Diego, CA (US);

John E. Cunningham, San Diego, CA (US);

Ashok V. Krishnamoorthy, San Diego, CA (US);

Assignee:

ORACLE INTERNATIONAL CORPORATION, Redwood Shores, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/293 (2006.01); G02B 6/13 (2006.01); G02F 1/225 (2006.01); B01J 37/34 (2006.01); B01J 37/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/29395 (2013.01); B01J 37/12 (2013.01); B01J 37/349 (2013.01); G02B 6/13 (2013.01); G02B 6/2934 (2013.01); G02F 1/2257 (2013.01);
Abstract

An optical device is described. This optical device includes optical components having resonance wavelengths that match target values with a predefined accuracy (such as 0.1 nm) and with a predefined time stability (such as permanent or an infinite time stability) without thermal tuning and/or electronic tuning. The stable, accurate resonance wavelengths may be achieved using a wafer-scale, single (sub-second) shot trimming technique that permanently corrects the phase errors induced by material variations and fabrication inaccuracies in the optical components (and, more generally, resonant silicon-photonic optical components). In particular, the trimming technique may use photolithographic exposure of the optical components on the wafer in parallel, with time-modulation for each individual optical component based on active-element control. Note that the physical mechanism in the trimming technique may involve superficial room-temperature oxidation of the silicon surface, which is induced by deep-ultraviolet radiation in the presence of oxygen.


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