The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9465069 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 11, 2016

Filed:

Sep. 24, 2014
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;

Inventor:

Jan Deckers, Leuven, BE;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01R 31/265 (2006.01); H01L 21/66 (2006.01); G01R 31/40 (2014.01); G01N 21/63 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2656 (2013.01); G01N 21/63 (2013.01); G01N 21/6408 (2013.01); G01N 21/6489 (2013.01); G01N 33/00 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H02S 50/00 (2013.01); G01N 2033/0095 (2013.01);
Abstract

The present disclosure relates to methods for determining recombination characteristics at metallized semiconductor surfaces and of metallized semiconductor junctions, based on photo-conductance decay measurements. Dedicated test structures are used comprising a plurality of metal features in contact with a semiconductor surface at predetermined locations, the metal features being provided in a plurality of zones, each of the plurality of zones having a different metal coverage. The method comprises performing a photo-conductance decay measurement in each of the plurality of zones, thereby determining effective lifetimes for different injection levels as a function of metal coverage; and extracting the recombination characteristics from the determined effective lifetimes.


Find Patent Forward Citations

Deckers, Jan. (2016). Method for the extraction of recombination characteristics at metallized semiconductor surfaces (U.S. Patent No. 9465069). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9465069

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