The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Nov. 21, 2013
Applicant:

Wonik Ips Co., Ltd., Pyeongtaek-Si, Gyeonggi-Do, KR;

Inventors:

Young Hoon Park, Anseong-Si, KR;

Dong Ho Ryu, Hwaseong-Si, KR;

Won Jun Yoon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/45508 (2013.01); C23C 16/45519 (2013.01); C23C 16/45548 (2013.01); C23C 16/45551 (2013.01);
Abstract

The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.


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