The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jun. 27, 2014
Applicants:
Robert F. Steimle, Austin, TX (US);
Paul M. Winebarger, Austin, TX (US);
Inventors:
Robert F. Steimle, Austin, TX (US);
Paul M. Winebarger, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00238 (2013.01); B81C 1/00246 (2013.01); B81C 1/00253 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01);
Abstract
A method and apparatus are described for fabricating a high aspect ratio MEMS sensor device having multiple vertically-stacked inertial transducer elements (B,D) formed in different layers of a multi-layer semiconductor structure () and one or more cap devices () bonded to the multi-layer semiconductor structure () to protect any exposed inertial transducer element from ambient environmental conditions.