The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Jun. 22, 2015
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Germano Nicollini, Piacenza, IT;

Andrea Barbieri, Casalpusterlengo, IT;

Federica Barbieri, Milan, IT;

Alberto Danioni, Pavia, IT;

Edoardo Marino, Pero, IT;

Sergio Pernici, Bergamo, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 3/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); H04R 3/00 (2013.01); H04R 2201/003 (2013.01);
Abstract

A MEMS acoustic transducer device has a capacitive microelectromechanical sensing structure and a biasing circuit. The biasing circuit includes a voltage-boosting circuit that supplies a boosted voltage on an output terminal, and a high-impedance insulating circuit element set between the output terminal and a terminal of the sensing structure, which defines a first high-impedance node associated with the insulating circuit element. The biasing circuit has: a pre-charge stage that generates a first pre-charge voltage on a first output thereof, as a function of, and distinct from, the boosted voltage; and a first switch element set between the first output and the first high-impedance node. The first switch element is operable for selectively connecting the first high-impedance node to the first output, during a phase of start-up of the biasing circuit, for biasing the first high-impedance node to the first pre-charge voltage.


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