The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Apr. 11, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventor:

Mazhareddin Taghivand, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 7/08 (2006.01); H03L 7/099 (2006.01); H03B 5/12 (2006.01);
U.S. Cl.
CPC ...
H03L 7/08 (2013.01); H03B 5/1212 (2013.01); H03B 5/1228 (2013.01); H03B 5/1256 (2013.01); H03B 5/1296 (2013.01); H03L 7/099 (2013.01);
Abstract

Techniques for providing transformer-based CMOS oscillators capable of operation with low voltage power supplies. In an exemplary embodiment, an LC tank is provided at the drains of a transistor pair, and the inductance of the LC tank is mutually magnetically coupled to an inductance between the gates of the transistor pair. A separate complementary transistor pair is also coupled to the LC tank. A further exemplary embodiment provides an LC tank at the gates of a transistor pair, as well as for three-way coupling amongst a tank inductance, an inductance between the gates of the transistor pair, and an inductance between the gates of a complementary transistor pair.


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