The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Apr. 15, 2014
California Institute of Technology, Pasadena, CA (US);
Cecile Jung-Kubiak, Pasadena, CA (US);
Theodore Reck, Pasadena, CA (US);
Goutam Chattopadhyay, Pasadena, CA (US);
Jose Vicente Siles Perez, Pasadena, CA (US);
Robert H. Lin, Chino, CA (US);
Imran Mehdi, South Pasadena, CA (US);
Choonsup Lee, La Palma, CA (US);
Ken B. Cooper, Glendale, CA (US);
Alejandro Peralta, Huntington Beach, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.