The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Sep. 14, 2015
Epistar Corporation, Hsinchu, TW;
Min-Yen Tsai, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Tsung-Hsun Chiang, Hsinchu, TW;
Wen-Hung Chuang, Hsinchu, TW;
Bo-Jiun Hu, Hsinchu, TW;
Tzu-Yao Tseng, Hsinchu, TW;
Jia-Kuen Wang, Hsinchu, TW;
Kuan-Yi Lee, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Tsung-Hsien Yang, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Kun-De Lin, Hsinchu, TW;
Yao-Ning Chan, Hsinchu, TW;
Chih-Chiang Lu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.