The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Oct. 17, 2012
Applicant:
Gamc Biotech Development Co., Ltd., New Taipei, TW;
Inventor:
Chia-Gee Wang, New York, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01); H01L 31/0368 (2006.01); H01L 31/074 (2012.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 21/02694 (2013.01); H01L 31/0368 (2013.01); H01L 31/074 (2013.01); H01L 31/0747 (2013.01); H01L 31/182 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method for fabricating a p-type semiconductor substrate including the following steps is provided. A carrier is provided, and the carrier includes a III-V compounds semiconductor layer and a III element layer disposed on the III-V compounds semiconductor layer. Si powders are disposed onto the III element layer of the carrier. The carrier is heated to enable the Si powders and the III element layer of the carrier to form a p-type poly-Si layer. In addition, a solar cell and a method of fabricating thereof are also provided.