The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Sep. 29, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Tim Boettcher, Lauenbrueck, DE;
Jan Fischer, Lueneburg, DE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/872 (2006.01); H01L 29/165 (2006.01); H01L 21/283 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/161 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 21/283 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/407 (2013.01); H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01);
Abstract
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.