The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Sep. 16, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thorsten Meyer, Munich, DE;

Werner Schwetlick, Groebenzell, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/28008 (2013.01); H01L 21/823487 (2013.01); H01L 29/407 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes first and second trenches extending from the first surface into the semiconductor body. The semiconductor device further includes at least one lateral IGFET including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches. The semiconductor device further includes at least one vertical IGFET including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches.


Find Patent Forward Citations

Loading…