The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 13, 2013
Jae-young Park, Yongin-si, KR;
Ji-hoon Cha, Seoul, KR;
Jae-jik Baek, Seongnam-si, KR;
Bon-young Koo, Suwon-si, KR;
Kang-hun Moon, Seoul, KR;
Bo-un Yoon, Seoul, KR;
Jae-Young Park, Yongin-si, KR;
Ji-Hoon Cha, Seoul, KR;
Jae-Jik Baek, Seongnam-si, KR;
Bon-Young Koo, Suwon-si, KR;
Kang-Hun Moon, Seoul, KR;
Bo-Un Yoon, Seoul, KR;
Abstract
A method of fabricating a semiconductor device is described. The method of fabricating a semiconductor device comprises providing a fin formed to protrude from a substrate and a plurality of gate electrodes formed on the fin to intersect the fin; forming first recesses in the fin on at least one side of the respective gate electrodes; forming an oxide layer on the surfaces of the first recesses; and expanding the first recesses into second recesses by removing the oxide layer. Related devices are also disclosed.