The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Dec. 17, 2015
Applicant:
Commissariat Á L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Bernard Previtali, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 21/308 (2013.01);
Abstract
A SOI substrate is covered by a semiconductor material pattern which comprises a dividing pattern made from electrically insulating material. The dividing pattern is coated by one or more semiconductor materials. The semiconductor material pattern is covered by a gate electrode which faces the dividing pattern. The semiconductor material pattern and the gate pattern are covered by a covering layer. The substrate is eliminated to access the source/drain regions. A second covering layer is deposited and access vias are formed to access the source/drain regions and gate electrode.