The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 11, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Yuichi Onozawa, Matsumoto, JP;
Takashi Shiigi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
A p-type base layer is selectively formed on a surface of an n-type drift layer; an n-type source layer is selectively formed on a surface of the p-type base layer; and a p-type contact layer is formed to be in contact with the selectively-formed n-type source layer. A p-type counter layer is formed to be in contact with the n-type source layer, so as to overlap the p-type contact layer, so as to be separated from an interface where the p-type base layer and the gate oxide film are in contact with each other, and to be shallower than the p-type base layer. Accordingly, switching destruction caused by process defects in an insulated gate semiconductor device is reduced.