The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Apr. 27, 2015
Applicant:
Dongbu Hitek Co., Ltd., Gangnam-gu Seoul, KR;
Inventor:
Choul Joo Ko, Sungnam-si, KR;
Assignee:
DONGBU HITEK CO., LTD., Gangnam-Gu, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/336 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0878 (2013.01); H01L 29/063 (2013.01); H01L 29/1083 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/7816 (2013.01); H01L 29/086 (2013.01); H01L 29/42368 (2013.01);
Abstract
A high voltage semiconductor device includes a well region of a first conductive type formed at a surface portion of a substrate, a gate electrode disposed on the well region, a source region formed at a surface portion of the well region adjacent to the gate electrode, a drain region formed at a surface portion of the well region adjacent to the gate electrode, and a drift region of a second conductive type disposed under the drain region.