The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 19, 2014
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza (MB), IT;
Inventors:
Vincenzo Palumbo, Vimercate, IT;
Mirko Venturato, Cabiate, IT;
Assignee:
STMICROELECTRONICS S.R.L., Agrate Brianza (MB), IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); G01R 15/04 (2006.01); H01L 23/58 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 23/5225 (2013.01); H01L 23/5228 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 29/405 (2013.01); H01L 29/66681 (2013.01); H01L 29/7817 (2013.01); G01R 15/04 (2013.01); H01L 23/585 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.