The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Oct. 11, 2013
Crocus Technology SA, Grenoble, FR;
Yann Conraux, Sassenage, FR;
CROCUS TECHNOLOGY SA, Grenoble, FR;
Abstract
Self-reference-based MRAM element including: first and second magnetic tunnel junctions, each having a magnetoresistance that can be varied; and a field line for passing a field current to vary the magnetoresistance of the first and second magnetic tunnel junctions. The field line includes a first branch and a second branch each branch including cladding. The first branch is arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch is electrically connected in parallel with the first branch and arranged for passing a second portion of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction. The self-referenced MRAM element and an MRAM device including corresponding MRAM elements can use a reduced field current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile