The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9461086 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 04, 2016

Filed:

Jan. 14, 2016
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Atsushi Kanome, Tokyo, JP;

Takashi Usui, Ashigarakami-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 27/146 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/14623 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 21/3065 (2013.01); H01L 21/76804 (2013.01); H01L 21/76816 (2013.01);
Abstract

A method of manufacturing a semiconductor device, comprising forming an insulating member on a structure having a height difference, and forming openings in the insulating member, the forming openings including first etching under a condition with a microloading phenomenon and second etching under a condition with a reverse microloading phenomenon, wherein the first etching is stopped before an upper face of the structure is exposed and then the second etching is started.


Find Patent Forward Citations

Kanome, Atsushi. (2016). Method of manufacturing semiconductor device (U.S. Patent No. 9461086). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9461086

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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