The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 23, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Ryohichi Masuda, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Variation in threshold voltages in a device operation is reduced. An insulator layer which is disposed to be opposed to a channel regionof a MOS transistor and is formed to have a laminated structure of a silicon nitride filmand a silicon oxide filmand an inverted signal input unit which inputs a signal obtained by inverting an input signal inputted into a source regionof a MOS transistor into a channel regionare provided and the inverted signal input unit includes another gate electrodewhich is formed on an extended portion of the channel regionof the gate electrodein a manner to be adjacent to the gate electrodeof the MOS transistor and a CMOS circuitwhich inverts an input signal inputted into the source regionof the MOS transistor in accordance with an input value of the input signal and inputs a signal obtained through inversion in the CMOS circuitinto another gate electrode