The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Dec. 10, 2013
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;

Inventors:

Mian Zeng, Beijing, CN;

Yongjun Yoon, Beijing, CN;

Zhizhong Tu, Beijing, CN;

Jaikwang Kim, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/12 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01);
Abstract

A thin film transistor and a method of manufacturing the same, an array substrate and a display device are provided, the thin film transistor including: a source, a drain, and a gate; and a semiconductor active layer, wherein the source overlays a periphery of the semiconductor active layer, the drain is located in a central region of the semiconductor active layer, and an insulation layer is disposed between the source and the drain. By means of the above thin film transistor, the ratio of width to length of a channel can be increased without influencing the aperture ratio of pixel.


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