The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 24, 2015
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Erika Kanezaki, Yokkaichi, JP;
Ryo Nakamura, Yokkaichi, JP;
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01);
Abstract
A method of forming a NAND flash memory includes forming a dielectric layer over NAND strings separated by shallow trench isolation structures, forming an opening in a mask layer over the dielectric layer, the opening extending over contact areas, the opening having a first width at first locations over contact areas and having a second width at second locations over shallow trench isolation structures, the second width being less than the first width.