The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jul. 01, 2015
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
Samsung Electronics Co., Ltd., Suwon-si, KR;
Min-Chul Sun, Seoul, KR;
Byung-Gook Park, Seoul, KR;
Abstract
A semiconductor device comprises a substrate extending in a horizontal direction and a vertical transistor on the substrate. The vertical transistor comprises: a first diffusion region on the substrate; a channel region on the first diffusion region and extending in a vertical direction relative to the horizontal direction of the extension of the substrate; a second diffusion region on the channel region; and a gate electrode at a sidewall of, and insulated from, the channel region. A horizontal transistor is positioned on the substrate, the horizontal transistor comprising: a first diffusion region and a second diffusion region on the substrate and spaced apart from each other; a channel region on the substrate between the first diffusion region and the second diffusion region; and a gate electrode on the channel region and isolated from the channel region. A portion of a gate electrode of the vertical transistor and a portion of the gate electrode of the horizontal transistor are at a same vertical position in the vertical direction relative to the substrate.