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H01L 29/49 (2006.01); H01L 27/08 (2006.01); H01L 27/07 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0814 (2013.01); H01L 27/0207 (2013.01); H01L 27/075 (2013.01); H01L 27/0727 (2013.01); H01L 29/0649 (2013.01); H01L 29/872 (2013.01);

Abstract

According to an embodiment of the invention there may be provided a die that may include (a) a first region of a first type; (b) a first conductor that contacts the first region; (c) a substrate having a substrate portion of the first type; wherein the substrate portion contacts the first region; an intermediate region of a second type; wherein the first type and the second type are selected from an n-type semiconductor and a p-type semiconductor; wherein the first type differs from the second type; (d) a second region of the second type; (e) a second conductor that contacts the second region; (f) a third region of the second type; (g) a third conductor that contacts the third region; (h) a fourth region of the first type; wherein the third region contacts the fourth region and does not contact the intermediate region; (i) a fourth conductor that contacts the intermediate region to form a first Schottky diode. A doping concentration of the intermediate region may be lower that a doping concentration of each one of the second region and the third region. A doping concentration of the substrate portion may be lower than a doping concentration of the first region. The third and fourth conductors may be electrically coupled to each other.

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