The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 30, 2015
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Minoru Moriwaki, Matsumoto, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); G02F 1/136204 (2013.01); H01L 27/0255 (2013.01); H01L 27/0296 (2013.01); H01L 27/1214 (2013.01); H01L 27/1251 (2013.01);
Abstract
In an element substrate of an electro-optical device, MOS transistors (electrostatic protection element) are provided on an opposite side to a light transmitting substrate with respect to the insulating film, and heat dissipation layers that overlap drain regions of the MOS transistor in a plan view are provided between the light transmitting substrate and the insulating film. In addition, the heat dissipation layers are connected to the drain regions through contact holes which are formed in the insulating film.