The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Aug. 02, 2015
Applicant:

Powerchip Technology Corporation, Hsinchu, TW;

Inventor:

Zih-Song Wang, Nantou County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/28194 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01);
Abstract

A patterning method is provided. Mask structures including first mask layers and first photoresist layers are formed sequentially on a material layer. A second mask layer covering the mask structures is conformally formed on the material layer. First sacrificed layers are formed between the mask structures. Parts of the second mask layer are removed to expose the first photoresist layers and form first U-shape mask layers. The first photoresist layers and the first sacrificed layers are removed. A third mask layer having first surfaces and second surfaces lower than the first surfaces is conformally formed on the material layer. Second sacrificed layers are formed on the second surfaces. Parts of the third mask layer are removed to expose protrusions of the first U-shape mask layers and form second U-shape mask layers. The material layer is patterned by using protrusions of the second U-shape mask layers as masks.


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