The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 22, 2015
Fuji Electric Co., Ltd., Kawasaki, JP;
Hong-fei Lu, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device manufacturing method for a semiconductor device having a p-n junction formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region, and comprising a low-lifetime region that has a carrier lifetime shorter than that in other regions at the interface of the p-n junction. The method includes an implantation process of, after implanting a second conductivity type impurity into the surface of the first semiconductor region with a first acceleration energy, implanting a second conductivity type impurity, with a second acceleration energy differing from the first acceleration energy, into the surface of the first semiconductor region into which the second conductivity type impurity has been implanted.