The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Apr. 06, 2015
National Institute of Standards and Technology, Gaithersburg, MD (US);
Matthew D. Brubaker, Louisville, CO (US);
William M. Old, Denver, CO (US);
Kristine A. Bertness, Boulder, CO (US);
Matthew D. Brubaker, Louisville, CO (US);
William M. Old, Denver, CO (US);
THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, Washington, DC (US);
REGENTS OF THE UNIVERISTY OF COLORADO, Denver, CO (US);
Abstract
A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.