The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Apr. 07, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Akhilesh Gautam, Clifton Park, NY (US);

Suresh Uppal, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 21/66 (2006.01); G11C 17/12 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G11C 17/12 (2013.01); H01L 27/11206 (2013.01); G01R 31/26 (2013.01); H01L 22/34 (2013.01);
Abstract

A method of forming an OTPROM capable of storing twice the number of bits as a conventional OTPROM without increasing the overall size of the device is provided. Embodiments include forming a OTPROM, the OTPROM array having a plurality of formed devices; receiving a binary code to program the OTPROM array; separating the binary code into a first part and a second part; programming each device with one of four data storage states by: forming a gate oxide layer of each device to a thickness corresponding to the first part of the binary code, and selectively applying a TDDB stress to the gate oxide layer corresponding to the second part of the binary code; detecting a Idsat level discharged by each device with a multi-bit sense amplifier; and reading the state of each device based on the detected Idsat level.


Find Patent Forward Citations

Loading…