The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Mar. 21, 2013
Applicants:

Lite-on Electronics (Guangzhou) Limited, Guangzhou, CN;

Lite-on Technology Corporation, Taipei, TW;

Inventors:

Shih-Jia Zeng, Hsinchu, TW;

Chien-Fu Tseng, Hsinchu, TW;

Hsie-Chia Chang, Hsinchu, TW;

Yen-Yu Chou, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/00 (2006.01); G11C 16/26 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1048 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/3422 (2013.01);
Abstract

A method for determining a storing state of a flash memory is provided. The method includes the following steps. Firstly, plural first specific cell patterns are programmed into the flash memory. Then, plural second specific cell patterns are programmed into the flash memory. Then, a slicing voltage is adjusted to allow a distinguishable error percentage to be lower than a predetermined value. Afterwards, a first storing state and a second storing state of other cells of the flash memory are distinguished from each other according to the adjusted slicing voltage.


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