The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Mar. 02, 2015
Applicant:
Stmicroelectronics (Grenoble 2) Sas, Grenoble, FR;
Inventors:
Vincent Rabary, Champagnier, FR;
Nicolas Aupetit, Voreppe, FR;
Assignee:
STMicroelectronics (Grenoble 2) SAS, Grenoble, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 7/06 (2006.01); G11C 5/14 (2006.01); G11C 7/02 (2006.01); G11C 8/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5664 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0097 (2013.01); G11C 17/165 (2013.01); G11C 17/18 (2013.01); G11C 2013/0054 (2013.01);
Abstract
A non-volatile digital memory includes: a plurality of thin film resistors; and a control circuit adapted to: program, during a first programming phase, the thin film resistors with a plurality of bits of data by passing a current through at least one of the thin film resistors to reduce its resistance; and read, during a restoration phase, the plurality of bits of data stored by the thin film resistors by generating an electrical signal associated with each thin film resistor and comparing each electrical signal with a reference signal.