The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Jan. 12, 2015
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Seok Joon Kang, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/14 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/062 (2013.01); G11C 7/14 (2013.01); G11C 13/0038 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A semiconductor integrated circuit device configured for sensing a pure leakage current of a cell array and improving a read error is disclosed. The semiconductor integrated circuit device may include a leakage current sensing unit configured for sensing a pure leakage current of a cell array, and a determination circuit unit configured for comparing a voltage level of the input node with a reference voltage and for determining a state of read data while in a read mode. Whereby an output current may be compared with a read current of the cell array at the input node, and the output current may include the summation of the pure leakage current and a reference current.


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