The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Apr. 12, 2011
Applicants:

Meihong Wu, Shanghai, CN;

Weizhong Jin, Shanghai, CN;

Huande Sun, Shanghai, CN;

Guohua Yang, Shanghai, CN;

Kanyi Shen, Shanghai, CN;

Jie Huang, Shanghai, CN;

Guobao LI, Shanghai, CN;

Inventors:

Meihong Wu, Shanghai, CN;

Weizhong Jin, Shanghai, CN;

Huande Sun, Shanghai, CN;

Guohua Yang, Shanghai, CN;

Kanyi Shen, Shanghai, CN;

Jie Huang, Shanghai, CN;

Guobao Li, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/13 (2006.01); G01N 27/72 (2006.01); G01R 33/00 (2006.01);
U.S. Cl.
CPC ...
G06F 17/13 (2013.01); G01N 27/72 (2013.01); G01R 33/0064 (2013.01);
Abstract

A method for detecting electromagnetic property of oriented silicon steel, the method comprises: measuring Euler angles of each of crystal grains in a specimen by use of metallographic etch-pit method; calculating orientation deviation angle θ(degree) of the crystal grain; combining area Si (mm) of the crystal grain and correction coefficient X of element Si (X=0.1˜10 T/degree); correcting on the basis of the magnetic property B(saturation magnetic induction, T) of single-crystal material by using these parameters (θ, S, X), formula for correcting is


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