The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2016

Filed:

Aug. 26, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Yasuto Kodera, Fujisawa, JP;

Toshio Suzuki, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01D 15/00 (2006.01); G11B 5/127 (2006.01); B41J 2/16 (2006.01); B41J 2/14 (2006.01);
U.S. Cl.
CPC ...
B41J 2/162 (2013.01); B41J 2/14233 (2013.01); B41J 2/161 (2013.01); B41J 2/164 (2013.01); B41J 2/1606 (2013.01); B41J 2/1623 (2013.01); B41J 2/1628 (2013.01); B41J 2/1631 (2013.01);
Abstract

A method of manufacturing a liquid ejection head includes forming a hole in an SOI substrate including a first silicon layer, a second silicon layer, and a silicon oxide layer interposed between the first and second silicon layers such that the hole extends through the first silicon layer and the silicon oxide layer to the second silicon layer, forming a first protective film on the first silicon layer and an inner wall of the hole, forming a water-repellent film on the first protective film, attaching a support substrate to part of the water-repellent film facing away from the first silicon layer, removing the second silicon layer to remove a bottom of the hole, removing part of the water-repellent film disposed on the inner wall of the hole, and releasing the support substrate from the water-repellent film.


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