The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
May. 27, 2015
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Hiroshi Higuchi, Atsugi, JP;
Takayuki Kamimura, Kawasaki, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/3065 (2006.01); B41J 2/00 (2006.01);
U.S. Cl.
CPC ...
B41J 2/00 (2013.01);
Abstract
A method of making a semiconductor substrate having a through-hole includes a step of forming an etching mask on a semiconductor substrate in accordance with a pattern corresponding to the through-hole, and a step of forming the through-hole by etching the semiconductor substrate, on which the etching mask has been formed, by reactive ion etching. At least a part of the pattern corresponding to the through-hole is formed so that the semiconductor substrate is exposed in a frame-like shape along the inner edge of the through-hole.