The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Sep. 10, 2014
Ngk Insulators, Ltd., Nagoya, JP;
Takahiro Tomita, Nagoya, JP;
Kiyoshi Matsushima, Nagoya, JP;
Katsuhiro Inoue, Nagoya, JP;
Yoshimasa Kobayashi, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
There is disclosed a silicon carbide porous material having a high thermal shock resistance. The silicon carbide porous material of the present invention includes silicon carbide particles, metal silicon and an oxide phase, and the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase. Furthermore, the oxide phase includes a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase. Here, a lower limit value of a content ratio of the dispersion phase in the oxide phase is preferably 1 mass %, and upper limit value of the content ratio of the dispersion phase in the oxide phase is 40 mass %. Furthermore, it is preferable that the parent phase is cordierite and that the dispersion phase is mullite.