The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Dec. 06, 2012
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/09 (2006.01); H05K 3/46 (2006.01); H05K 3/16 (2006.01); H05K 3/00 (2006.01); B81C 99/00 (2010.01); H01L 29/06 (2006.01); H05K 1/02 (2006.01); H05K 3/06 (2006.01); H05K 3/10 (2006.01); H05K 3/14 (2006.01);
U.S. Cl.
CPC ...
H05K 3/007 (2013.01); B81C 99/008 (2013.01); H01L 29/0669 (2013.01); H05K 1/0274 (2013.01); H05K 1/0296 (2013.01); H05K 1/09 (2013.01); H05K 3/067 (2013.01); H05K 3/101 (2013.01); H05K 3/146 (2013.01); H05K 3/16 (2013.01); H05K 3/46 (2013.01); H05K 3/4685 (2013.01); H05K 2201/09227 (2013.01);
Abstract
Provided is a method of manufacturing a nanowire, including: forming a plurality of grid patterns on a grid base layer; forming a sacrificial layer on the grid base layer on which the grid patterns are formed; producing a nanowire grid structure by forming a nanowire base layer on the sacrificial layer; forming a nanowire by wet etching the nanowire base layer; and separating the grid patterns from the nanowire by etching the sacrificial layer.