The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Mar. 26, 2015
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jongpil Jeong, Seoul, KR;

Sanghyun Lee, Seoul, KR;

Sehwan Sim, Seoul, KR;

Sungyi Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/42 (2010.01); H01L 33/48 (2010.01); H01L 33/04 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/42 (2013.01); H01L 33/486 (2013.01); H01L 33/007 (2013.01); H01L 33/04 (2013.01); H01L 33/145 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity.


Find Patent Forward Citations

Jeong, Jongpil. (2016). Light emitting device (U.S. Patent No. 9455371). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9455371

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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