The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Jan. 06, 2010
Sivalingam Sivananthan, Naperville, IL (US);
Michael Carmody, Western Springs, IL (US);
Robert W. Bower, Anacortes, WA (US);
Shubhrangshu Mallick, Romeoville, IL (US);
James Garland, Aurora, IL (US);
Sivalingam Sivananthan, Naperville, IL (US);
Michael Carmody, Western Springs, IL (US);
Robert W. Bower, Anacortes, WA (US);
Shubhrangshu Mallick, Romeoville, IL (US);
James Garland, Aurora, IL (US);
EPIR Technologies, Inc., Bolingbrook, IL (US);
Abstract
A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel homojunction interposed between the first and second subcells. A first side of the tunnel homojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type and is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel homojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type and also is comprised of a highly doped Group IV semiconductor material. The tunnel homojunction permits photoelectric series current to flow through the subcells.